Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials
Identifieur interne : 000360 ( Chine/Analysis ); précédent : 000359; suivant : 000361Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials
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Abstract
The lattice-misfit InN/GaN (0001 ) interface supports a triangular network of α-core 90° partial misfit dislocations. These misfit dislocations provide excellent strain relief. However, in their unreconstructed form the dislocation contains numerous high-energy N dangling bonds, which must be eliminated by reconstructing the dislocation core. Existing single-period (SP) and double-period (DP) dislocation reconstruction models eliminate these dangling bonds via a like-atom dimerization, such as N-N dimers. However, we show that these N-N dimers are unstable for the III-N materials, so an entirely new reconstruction mechanism is needed. A "triple-period" (TP) structural model is developed which eliminates N dangling bonds via the formation of N vacancies instead of N-N dimers. The model contains no N-N (or III-III) bonds, fully bonds all N atoms to four group-III neighboring atoms, and satisfies the "electron counting rule" by transferring charge from In dangling bonds to Ga dangling bonds.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials</title>
<author><name>LIXIN ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory</s1>
<s2>Golden, CO 80401</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>National Renewable Energy Laboratory</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Nankai University</s1>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Department of Physics, Nankai University</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mcmahon, W E" uniqKey="Mcmahon W">W. E. Mcmahon</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory</s1>
<s2>Golden, CO 80401</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>National Renewable Energy Laboratory</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Liu, Y" uniqKey="Liu Y">Y. Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, University of Hong Kong</s1>
<s3>HKG</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Department of Physics, University of Hong Kong</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Cai, Y" uniqKey="Cai Y">Y. Cai</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics, Hong Kong University of Science and Technology</s1>
<s3>HKG</s3>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Department of Physics, Hong Kong University of Science and Technology</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Xie, M H" uniqKey="Xie M">M. H. Xie</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, University of Hong Kong</s1>
<s3>HKG</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Department of Physics, University of Hong Kong</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Wang, N" uniqKey="Wang N">N. Wang</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics, Hong Kong University of Science and Technology</s1>
<s3>HKG</s3>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Department of Physics, Hong Kong University of Science and Technology</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zhang, S B" uniqKey="Zhang S">S. B. Zhang</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute</s1>
<s2>Troy, NY 12180</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Troy, NY 12180</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0455761</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0455761 INIST</idno>
<idno type="RBID">Pascal:12-0455761</idno>
<idno type="wicri:Area/Main/Corpus">001534</idno>
<idno type="wicri:Area/Main/Repository">001308</idno>
<idno type="wicri:Area/Chine/Extraction">000360</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0039-6028</idno>
<title level="j" type="abbreviated">Surf. sci.</title>
<title level="j" type="main">Surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ab initio calculations</term>
<term>Dislocation core</term>
<term>Dislocation structure</term>
<term>Gallium nitride</term>
<term>Indium nitride</term>
<term>Inorganic compounds</term>
<term>Misfit dislocations</term>
<term>Partial dislocation</term>
<term>Scanning tunneling microscopy</term>
<term>Semiconductor materials</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dislocation imparfaite</term>
<term>Dislocation interfaciale</term>
<term>Coeur dislocation</term>
<term>Structure dislocation</term>
<term>Calcul ab initio</term>
<term>Microscopie tunnel balayage</term>
<term>Nitrure d'indium</term>
<term>Semiconducteur</term>
<term>Nitrure de gallium</term>
<term>In N</term>
<term>InN</term>
<term>Ga N</term>
<term>GaN</term>
<term>Composé minéral</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The lattice-misfit InN/GaN (0001 ) interface supports a triangular network of α-core 90° partial misfit dislocations. These misfit dislocations provide excellent strain relief. However, in their unreconstructed form the dislocation contains numerous high-energy N dangling bonds, which must be eliminated by reconstructing the dislocation core. Existing single-period (SP) and double-period (DP) dislocation reconstruction models eliminate these dangling bonds via a like-atom dimerization, such as N-N dimers. However, we show that these N-N dimers are unstable for the III-N materials, so an entirely new reconstruction mechanism is needed. A "triple-period" (TP) structural model is developed which eliminates N dangling bonds via the formation of N vacancies instead of N-N dimers. The model contains no N-N (or III-III) bonds, fully bonds all N atoms to four group-III neighboring atoms, and satisfies the "elec<sub>t</sub>
ron counting rule" by transferring charge from In dangling bonds to Ga dangling bonds.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0039-6028</s0>
</fA01>
<fA02 i1="01"><s0>SUSCAS</s0>
</fA02>
<fA03 i2="1"><s0>Surf. sci.</s0>
</fA03>
<fA05><s2>606</s2>
</fA05>
<fA06><s2>21-22</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>LIXIN ZHANG</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MCMAHON (W. E.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LIU (Y.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>CAI (Y.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>XIE (M. H.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>WANG (N.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>ZHANG (S. B.)</s1>
</fA11>
<fA14 i1="01"><s1>National Renewable Energy Laboratory</s1>
<s2>Golden, CO 80401</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Physics, Nankai University</s1>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Physics, University of Hong Kong</s1>
<s3>HKG</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Department of Physics, Hong Kong University of Science and Technology</s1>
<s3>HKG</s3>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute</s1>
<s2>Troy, NY 12180</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
</fA14>
<fA20><s1>1728-1738</s1>
</fA20>
<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>12426</s2>
<s5>354000502006670240</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>28 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0455761</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Surface science</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The lattice-misfit InN/GaN (0001 ) interface supports a triangular network of α-core 90° partial misfit dislocations. These misfit dislocations provide excellent strain relief. However, in their unreconstructed form the dislocation contains numerous high-energy N dangling bonds, which must be eliminated by reconstructing the dislocation core. Existing single-period (SP) and double-period (DP) dislocation reconstruction models eliminate these dangling bonds via a like-atom dimerization, such as N-N dimers. However, we show that these N-N dimers are unstable for the III-N materials, so an entirely new reconstruction mechanism is needed. A "triple-period" (TP) structural model is developed which eliminates N dangling bonds via the formation of N vacancies instead of N-N dimers. The model contains no N-N (or III-III) bonds, fully bonds all N atoms to four group-III neighboring atoms, and satisfies the "elec<sub>t</sub>
ron counting rule" by transferring charge from In dangling bonds to Ga dangling bonds.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Dislocation imparfaite</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Partial dislocation</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Dislocación imperfecta</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Dislocation interfaciale</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Misfit dislocations</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Coeur dislocation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Dislocation core</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Centro dislocación</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Structure dislocation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Dislocation structure</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Calcul ab initio</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Ab initio calculations</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Microscopie tunnel balayage</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Scanning tunneling microscopy</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>15</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>16</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>17</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>17</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>In N</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Ga N</s0>
<s4>INC</s4>
<s5>34</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>35</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>62</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>62</s5>
</fC03>
<fN21><s1>353</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>
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